Qubits - The NOMIS Foundation

Hole spin qubits are emerging as the workhorse of semiconducting quantum processors because of their large spin-orbit interaction, enabling fast, low-power, all-electric operations. However, this interaction also causes non-uniformities, resulting in site-dependent qubit energies and anisotropies. Although these anisotropies enable single-spin control, if not properly harnessed, they can hinder scalability. Here, we report on microwave-driven singlet-triplet qubits in planar germanium and use them to investigate spin anisotropies. For in-plane magnetic fields, the spins are largely anisotropic and electrically tunable, allowing access to all transitions and coherence times exceeding 3 μs are extracted. For out-of-plane fields they have an isotropic response. Even in this field direction, where the qubit lifetime is strongly affected by nuclear spins, we find 400 ns coherence times. Our work adds a valuable tool to investigate and harness the spin anisotropies, applicable to two-dimensional devices, facilitating the path towards scalable quantum processors.

Gate-tunable transmons (gatemons) employing semiconductor Josephson junctions have recently emerged as building blocks for hybrid quantum circuits. In this study, we present a gatemon fabricated in planar Germanium. We induce superconductivity in a two-dimensional hole gas by evaporating aluminum atop a thin spacer, which separates the superconductor from the Ge quantum well. The Josephson junction is then integrated into an Xmon circuit and capacitively coupled to a transmission line resonator. We showcase the qubit tunability in a broad frequency range with resonator and two-tone spectroscopy. Time-domain characterizations reveal energy relaxation and coherence times up to 75 ns. Our results, combined with the recent advances in the spin qubit field, pave the way towards novel hybrid and protected qubits in a group IV, CMOS-compatible material.

State-of-the-art transmon qubits rely on large capacitors, which systematically improve their coherence due to reduced surface-loss participation. However, this approach increases both the footprint and the parasitic cross-coupling and is ultimately limited by radiation losses – a potential roadblock for scaling up quantum processors to millions of qubits. In this work we present transmon qubits with sizes as low as 36×39μm2 with ≳100-nm-wide vacuum-gap capacitors that are micromachined from commercial silicon-on-insulator wafers and shadow evaporated with aluminum. We achieve a vacuum participation ratio up to 99.6% in an in-plane design that is compatible with standard coplanar circuits. Qubit relaxation-time measurements for small gaps with high zero-point electric field variance of up to 22 V/m reveal a double exponential decay indicating comparably strong qubit interaction with long-lived two-level systems. The exceptionally high selectivity of up to 20 dB to the superconductor-vacuum interface allows us to precisely back out the sub-single-photon dielectric loss tangent of aluminum oxide previously exposed to ambient conditions. In terms of future scaling potential, we achieve a ratio of qubit quality factor to a footprint area equal to 20μm-2, which is comparable with the highest T1 devices relying on larger geometries, a value that could improve substantially for lower surface-loss superconductors. © 2023 American Physical Society.

Publications in Qubits by NOMIS researchers

Exchange anisotropies in microwave-driven singlet-triplet qubits

A gate tunable transmon qubit in planar Ge

Compact vacuum-gap transmon qubits: Selective and sensitive probes for superconductor surface losses