Georgios Katsaros

Planar germanium is currently the only semiconducting platform where high-coherence spin qubits and proximity-induced superconductivity have each been demonstrated. Recent research into spin qubits in Ge/SiGe heterostructures has focused on increasing the thickness of the SiGe capping layer, reporting improvements in the electrostatic noise levels. Meanwhile, heterostructures with thinner capping layers remain rather unexplored, despite the potential advantages for proximity-induced superconductivity. Here, we study a Ge/SiGe heterostructure with a thin SiGe cap d ≈ 4 nm and investigate its viability to host low-noise quantum dots. To keep the thermal budget compatible with superconducting layers, low-temperature oxide deposition processes were developed and implemented for the gate dielectrics. The charge noise level of the fabricated devices is estimated to be 1.8 ± 1.0 μeV/Hz, comparable to devices fabricated on shallow heterostructures (d ∼ 20 nm) with high-temperature deposited oxides. Low charge noise levels, together with the straightforward integration of superconductors, make this heterostructure an attractive platform for prototyping hybrid semiconducting–superconducting devices.

Hole spin qubits are emerging as the workhorse of semiconducting quantum processors because of their large spin-orbit interaction, enabling fast, low-power, all-electric operations. However, this interaction also causes non-uniformities, resulting in site-dependent qubit energies and anisotropies. Although these anisotropies enable single-spin control, if not properly harnessed, they can hinder scalability. Here, we report on microwave-driven singlet-triplet qubits in planar germanium and use them to investigate spin anisotropies. For in-plane magnetic fields, the spins are largely anisotropic and electrically tunable, allowing access to all transitions and coherence times exceeding 3 μs are extracted. For out-of-plane fields they have an isotropic response. Even in this field direction, where the qubit lifetime is strongly affected by nuclear spins, we find 400 ns coherence times. Our work adds a valuable tool to investigate and harness the spin anisotropies, applicable to two-dimensional devices, facilitating the path towards scalable quantum processors.

High kinetic inductance superconductors are gaining increasing interest for the realisation of qubits, amplifiers and detectors. Moreover, thanks to their high impedance, quantum buses made of such materials enable large zero-point fluctuations of the voltage, boosting the coupling rates to spin and charge qubits. However, fully exploiting the potential of disordered or granular superconductors is challenging, as their inductance and, therefore, impedance at high values are difficult to control. Here, we report a reproducible fabrication of granular aluminium resonators by developing a wireless ohmmeter, which allows in situ measurements during film deposition and, therefore, control of the kinetic inductance of granular aluminium films. Reproducible fabrication of circuits with impedances (inductances) exceeding 13 kΩ (1 nH per square) is now possible. By integrating a 7.9 kΩ resonator with a germanium double quantum dot, we demonstrate strong charge-photon coupling with a rate of g_c/2π = 566 ± 2 MHz. This broadly applicable method opens the path for novel qubits and high-fidelity, long-distance two-qubit gates.